American Journal of Optics and Photonics

Volume 4, Issue 5, October 2016

  • First Investigation of Optical Properties and Local Structure of
    Gd3+ Doped Nano-Crystalline GeSe2

    H. Hantour

    Issue: Volume 4, Issue 5, October 2016
    Pages: 40-45
    Received: Oct. 31, 2016
    Accepted: Nov. 12, 2016
    Published: Nov. 29, 2016
    Abstract: Pure and Gd-doped nano-crystalline GeSe2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe2 and 48nm for Gd-doped sample. A wide... Show More
  • Behaviour of Non-ideal Saturable Absorber Doped on Active Fiber

    Abdallah Ijjeh, Saed Thuneibat

    Issue: Volume 4, Issue 5, October 2016
    Pages: 46-50
    Received: Sep. 23, 2016
    Accepted: Oct. 05, 2016
    Published: Dec. 02, 2016
    Abstract: In this paper, a non-ideal saturable absorber doped with an active fiber device is considered. The differential equations that describe the behavior of the device are simplified and solved numerically. The results show that as the non-ideal term (loss) increases, the laser performance degradation increases.
  • Electrons Break to Photons Even in a Low Voltage Electric Circuit

    Hadi Ensan

    Issue: Volume 4, Issue 5, October 2016
    Pages: 51-56
    Received: Oct. 26, 2016
    Accepted: Nov. 11, 2016
    Published: Dec. 12, 2016
    Abstract: This paper is the theory of breaking electrons in ordinary circuit elements like resistors and Light-Emitting Diodes (LED’s). Undergoing a change of electron has not been considered in the low voltage circuits so far. As it is shown here, there is a difference current before and after LED and resistors. The possibility of leakage current or escapin... Show More